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2SB1424
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
RoHS Compliant Product
D
A suffix of "-C" specifies halogen & lead-free
D1
A
E1
E
b1
1.BASE
SOT-89 2.COLLECTOR b
e C
L
3. EMITTER e1
FEATURES Dimensions In Millimeters Dimensions In Inches
Symbol
Min Max Min Max
Power dissipation A
b
1.400
0.320
1.600
0.520
0.055
0.013
0.063
0.020
PCM : 600 mW Temp.=25 b1 0.360 0.560 0.014 0.022
c 0.350 0.440 0.014 0.017
Collector current D 4.400 4.600 0.173 0.181
D1 1.400 1.800 0.055 0.071
ICM : -3 A E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
Collector-base voltage e 1.500TYP 0.060TYP
e1 2.900 3.100 0.114 0.122
V(BR)CBO : -20 V L 0.900 1.100 0.035 0.043
Operating and storage junction temperature range
TJ Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS Tamb=25 unless otherwise specified
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic=-50 A,IE=0 -20 V
Collector-emitter breakdown voltage V(BR)CEO Ic=-1mA,IB=0 -20 V
Emitter-base breakdown voltage V(BR)EBO IE=-50 A,IC=0 -6 V
Collector cut-off current ICBO VCB=-20V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
DC current gain hFE(1) VCE=-2V,IC=-100mA 120 390
Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-100mA -0.5 V
Transition frequency fT VCE=-2V,IC=-500mA,f=100MHz 240 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 35 pF
CLASSIFICATION OF hFE(1)
Rank Q R
Range 120-270 180-390
Marking AEQ AER
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 1 of 2
2SB1424
PNP Silicon
Elektronische Bauelemente
Medium Power Transistor
Electrical characteristic curves
http://www.SeCoSGmbH.com Any changing of specification will not be informed individual
01-Jun-2002 Rev. A Page 2 of 2