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STB30NS15
N-CHANNEL 150V - 0.075 - 30A D2PAK
LOW GATE CHARGE STripFETTM POWER MOSFET
TYPE VDSS RDS(on) ID
STB30NS15 150 V <0.1 30 A
s TYPICAL RDS(on) = 0.075
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s APPLICATION ORIENTED
CHARACTERIZATION 3
1
FOR THROUGH-HOLE VERSION CONTACT
s)
s
D2PAK
SALES OFFICE
t(
TO-263
(Suffix "T4")
uc
DESCRIPTION
This MOSFET series realized with STMicroelectronics
unique STripFET process has specifically been designed
d
to minimize input capacitance and gate charge. It is
therefore suitable as primary switch in advanced high-
efficiency, high-frequency isolated DC-DC converters for INTERNAL SCHEMATIC DIAGRAMP ro
Telecom and Computer applications. It is also intended
for any applications with low gate drive requirements.
le te
so
APPLICATIONS
Ob
s HIGH-EFFICIENCY DC-DC CONVERTERS
s UPS AND MOTOR CONTROL
-
ct (s)
o du
Pr
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
e
let
VDS Drain-source Voltage (VGS = 0) 150 V
VDGR Drain-gate Voltage (RGS = 20 k) 150 V
VGS
o Gate- source Voltage