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SEMICONDUCTOR KRC281S~KRC286S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
AUDIO MUTING APPLICATION.
E
FEATURES L B L
DIM MILLIMETERS
High emitter-base voltage : VEBO=25V(Min) A _
2.93 + 0.20
B 1.30+0.20/-0.15
High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)
C 1.30 MAX
D
2
Low on resistance : Ron=1 (Typ.) (IB=5mA) 3 D 0.40+0.15/-0.05
A
G
E 2.40+0.30/-0.20
H
With Built-in Bias Resistors. 1 G 1.90
H 0.95
Simplify Circuit Design. J 0.13+0.10/-0.05
Reduce a Quantity of Parts and Manufacturing Process. K 0.00 ~ 0.10
Q
L 0.55
P P
M 0.20 MIN
N 1.00+0.20/-0.10
N
C
P 7
EQUIVALENT CIRCUIT
J
Q 0.1 MAX
K
M
C
1. EMITTER
R1 2. BASE
B 3. COLLECTOR
E SOT-23
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V
Collector-Emitter Voltage VCEO 20 V
Emitter-Base Voltage VEBO 25 V
Collector Current IC 300 mA
Collector Power Dissipation PC 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
MARK SPEC
hFE classification
TYPE
B
Marking
KRC281S MQB Lot No.
KRC282S MRB
Type Name
KRC283S MSB
KRC284S MTB
KRC285S MUB
KRC286S MVB
2008. 10. 29 Revision No : 2 1/2
KRC281S~KRC286S
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector-Emitter Breakdown Voltage BVCEO IC=1mA 20 - - V
Collector-Base Breakdown Voltage BVCBO IC=50 A 50 - - V
Emitter-Base Breakdown Voltage BVEBO IE=50 A 25 - - V
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 0.1 A
Collector-Emitter Saturation Voltage VCE(sat) IC=30mA, IB=3mA - - 0.1 V
DC Current Gain hFE VCE=2V, IC=4mA 350 - 1200
KRC281S 1.54 2.2 2.86
KRC282S 3.29 4.7 6.11
KRC283S 3.92 5.6 7.28
Input Resistor R1 k
KRC284S 4.76 6.8 8.84
KRC285S 7 10 13
KRC286S 15.4 22 28.6
Transition Frequency fT * VCE=6V, IC=4mA, - 30 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 4.8 - pF
* Characteristic of Transistor Only.
Note) hFE Classification B:350 1200
2008. 10. 29 Revision No : 2 2/2