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2SC3356
High-Frequency Amplifier Transistor
NPN Silicon 3
P b Lead(Pb)-Free 1
2
FEATURES 1. BASE
* Low noise amplifier at VHF, UHF and CATV band. 2. EMITTER
* Low Noise and High Gain 3. COLLECTOR
* High Power Gain
SOT-23
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 20 V
VCEO Collector-Emitter Voltage 12 V
VEBO Emitter-Base Voltage 3 V
IC Collector Current -Continuous 0.1 A
PC Collector Power Dissipation 0.25 W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10A, IE=0 20 V
Collector-emitter breakdown voltage V(BR)CEO IC= 1mA, IB=0 12 V
Collector-emitter breakdown voltage VCE(sat) IC= 50mA, IB=5mA 200 mV
Collector cut-off current ICBO VCB=10V, IE=0 1 A
Emitter cut-off current IEBO VEB=1V, IC=0 1 A
VCE=3V, IC= 10mA
*
DC current gain hFE 82 270
Transition frequency fT VCE=10V, IC= 20mA 7 GHz
Noise figure NF VCE=10V, IC= 7mA, f = 1GHz 2 dB
*
pulse test: pulse width350s, Duty cycle2%
WEITRON 1/3 Rev.B 25-Feb-09
http://www.weitron.com.tw
2SC3356
WEITRON 2/3 Rev.B 25-Feb-09
http://www.weitron.com.tw
2SC3356
SOT-23 Package OutlineDimensions Unit:mm
A Dim Min Max
A 0.35 0.51
B 1.19 1.40
TOP V I EW B C C 2.10 3.00
D 0.85 1.05
E 0.46 1.00
D
G 1.70 2.10
G
E H 2.70 3.10
H J 0.01 0.13
K 0.89 1.10
K L 0.30 0.61
M 0.076 0.25
L
J M
WEITRON 3/3 Rev.B 25-Feb-09
http://www.weitron.com.tw