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2SA1036K
SOT-23-3L Transistor(PNP)
SOT-23-3L
1. BASE
2.92
2. EMITTER
0.35
3. COLLECTOR 1.17
Features
2.80 1.60
Large IC. IC= -500 mA
Low VCE(sat). Ideal for low-voltage operation.
0.15
1.90
MARKING : HP, HQ, HR
MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)
Symbol Parameter Value Units
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -32 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -500 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -32 V
Emitter-base breakdown voltage V(BR)EBO IE=-100A,IC=0 -5 V
Collector cut-off current ICBO VCB=-20V,IE=0 -1 A
Emitter cut-off current IEBO VEB=-4V,IC=0 -1 A
DC current gain hFE VCE=-3V,IC=-10mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.4 V
Transition frequency fT VCE=-5V,IC=-20mA,f=100MHz 200 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF
CLASSIFICATION OF hFE
Rank P Q R
Range 82 - 180 120 - 270 180 - 390
2SA1036K
SOT-23-3L Transistor(PNP)
Typical Characteristics