buk446-800a-b_1.pdf part of Philips buk446-800a-b 1 buk446-800a-b_1.pdf, . Electronic Components Datasheets Active components Transistors Philips buk446-800a-b

Text preview for : buk446-800a-b_1.pdf part of Philips buk446-800a-b 1 . Electronic Components Datasheets Active components Transistors Philips buk446-800a-b_1.pdf

Back to : buk446-800a-b_1.pdf | Home

Philips Semiconductors Product Specification

PowerMOS transistor BUK446-800A/B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. MAX. UNIT
field-effect power transistor in a
plastic full-pack envelope. BUK446 -800A -800B
The device is intended for use in VDS Drain-source voltage 800 800 V
Switched Mode Power Supplies ID Drain current (DC) 2.0 1.7 A
(SMPS), motor control, welding, Ptot Total power dissipation 30 30 W
DC/DC and AC/DC converters, and RDS(ON) Drain-source on-state 3 4
in general purpose switching resistance
applications.

PINNING - SOT186 PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
case
1 gate
2 drain
g
3 source
case isolated
1 2 3 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 800 V
VDGR Drain-gate voltage RGS = 20 k - 800 V