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TIP2955
TIP3055
COMPLEMENTARY SILICON POWER
TRANSISTORS
n SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The TIP3055 is a silicon epitaxial-base planar
NPN transistor mountend in TO-218 plastic
package and intented for power switching
circuits, series and shunt regulators, output
stages and hi-fi amplifiers.
The complementary PNP type is the TIP2955. 3
2
1
TO-218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Unit
V CBO Collector-Base Voltage (IE = 0) 100 V
V CEO Collector-emitter Voltage (I B = 0) 60 V
IC Collector Current 15 A
IB Base Current 7 A
P tot T otal Dissipation at T c 25 C
o
90 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
October 1995 1/4
TIP2955/TIP3055
THERMAL DATA
o
R thj -ca se Thermal Resistance Junction-case Max 1.4 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l Parameter T est Con ditio ns Min . T yp. Max. Unit
I CEX Collector Cut-off V CE = 100 V V BE = -1.5 V 5 mA
Current (V BE = 1.5V)
I CEO Collector Cut-off V CE = 30 V 0.7 mA
Current (I B = 0)
I EBO Emitter Cut- off Current V EB = 7 V 5 mA
(I C = 0)
V CEO(sus) Collector-Emitter I C = 30 mA 60 V
Sustaining Voltage
(I B = 0)
V CE(sat) Collector-emitter IC = 4 A I B = 0.4 A 1 V
Saturation Voltage I C = 10 A IB = 3.3 A 3 V
V BE Base-emitter Voltage IC = 4 A V CE = 4 V 1.8 V
h FE DC Current Gain IC = 4 A V CE = 4 V 20
I C = 10 A VCE = 4 V 5
h fe Small Signal Current IC = 1 A V CE = 10 V f = 1 KHz 15
Gain
fT Transition-Frequency I C = 0.5 A V CE = 10 V f = 1 MHz 3 MHz
RESISTIVE LOAD
t on Turn-on Time IC = 6 A IB1 = 0.6 A 0.5