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STP60NE03L-10
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on) ID
STP60NE03L-10 30 V < 0.010 60 A
s TYPICAL RDS(on) = 0.007
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE 100 oC
s APPLICATION ORIENTED
CHARACTERIZATION
3
2
DESCRIPTION 1
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size" TO-220
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING

s SOLENOID AND RELAY DRIVERS

s MOTOR CONTROL, AUDIO AMPLIFIERS

s DC-DC & DC-AC CONVERTERS

s AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc. )

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (V GS = 0) 30 V
V DGR Drain- gate Voltage (R GS = 20 k) 30 V
V GS Gate-source Voltage