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SMG2358N
2.8 A, 60 V, RDS(ON) 92 m
Elektronische Bauelemente N-Channel Enhancement Mode Mos.FET

RoHS Compliant Product
A suffix of "-C" specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High Cell Density
SC-59
trench process to provide Low RDS(on) and to ensure minimal power A
loss and heat dissipation. Typical applications are DC-DC converters L
3
and power management in portable and battery-powered products 3

such as computers, printers, PCMCIA cards, cellular and cordless Top View C B
1
telephones. 1 2

K E 2

FEATURES D
Low RDS(on) provides higher efficiency and extends battery life.
F G H J
Low thermal impedance copper leadframe SC-59 saves
board space.
Fast switching speed.
High performance trench technology.
REF. Millimeter REF. Millimeter
Min. Max. Min. Max.
PACKAGE INFORMATION A
B
2.70
2.25
3.10
3.00
G
H
0.10 REF.
0.40 REF.
C 1.30 1.70 J 0.10 0.20
Package MPQ Leader Size D 1.00 1.40 K 0.45 0.55
E 1.70 2.30 L 0.85 1.15
SC-59 3K 7 inch F 0.35 0.50

ABSOLUTE MAXIMUM RATINGS (TA=25