Text preview for : dta114e.pdf part of GSME dta114e . Electronic Components Datasheets Active components Transistors GSME dta114e.pdf
Back to : dta114e.pdf | Home
Guilin Strong Micro-Electronics Co.,Ltd.
GMDTA114E
DESCRIPTION&EQUIVALENT
DESCRIPTION&EQUIVALENT CIRCUIT
PNP DIGITAL TRANSISTOR(BUILT-IN RESISTORS)()
MAXIMUM RATINGS
Characteristic Symbol Rating Unit
Supply Voltage
VCC -50 V
Input Voltage
VIN -40 ~ 10 V
Output Current
IO(MAX) -100 mA
Power Dissipation
PD 200 mW
Junction Temperature
Tj 125
Storage Temperature
Tstg -55 ~ +125
DEVICE MARKING
DTA114E=
DTA114E=14
Guilin Strong Micro-Electronics Co.,Ltd.
GMDTA114E
ELECTRICAL CHARACTERISTICS
=25 unless otherwise noted 25)
(TA=25 )
Characteristic Symbol Test Condition Min Typ Max Unit
VCC=-5V,
VI(OFF)
IO=-100uA -- -- -0.5
Input Voltage
V
VO=-0.3V,
VI(ON) -3 -- --
IO=-10mA
Output Voltage IO=-10mA,
VO(ON) -- -- -0.3 V
II=-0.5mA
Input Current
II VI=-5V -- -- -0.88 mA
Output Current VCC=-50V,
IO(OFF) -- -- -0.5 uA
VI=0V
DC Current Gain VO=-5V,
GI 30 -- -- --
IO=-5mA
Input Resistance
R1 -- 7 10 13 K
Resistance Ratio
R2/R1 -- 0.8 1 1.2 --
Guilin Strong Micro-Electronics Co.,Ltd.
GMDTA114E
DIMENSION