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TC1550
N- and P-Channel
Enhancement-Mode Dual MOSFET
Features General Description
500V breakdown voltage The Supertex TC1550 consists of a high voltage N-channel and
Independent N- and P-channels P-channel MOSFET in an 8-Lead SOIC package. This is an
Electrically isolated N- and P-channels enhancement-mode (normally-off) transistor utilizing an advanced
Low input capacitance vertical DMOS structure and Supertex's well-proven silicon-gate
Fast switching speeds manufacturing process. This combination produces a device with
Free from secondary breakdowns the power handling capabilities of bipolar transistors and with the
Low input and output leakage high input impedance and positive temperature coefficient inherent
in MOS devices. Characteristic of all MOS structures, this device
Applications is free from thermal runaway and thermally induced secondary
breakdown.
High voltage pulsers
Amplifiers
Supertex's vertical DMOS FETs are ideally suited to a wide range
Buffers
of switching and amplifying applications where very low threshold
Piezoelectric transducer drivers
voltage, high breakdown voltage, high input impedance, low input
General purpose line drivers
capacitance, and fast switching speeds are desired.

Ordering Information
RDS(ON)
Package Option BVDSS/BVDGS
(Max)

Device 8-Lead SOIC
4.90x3.90mm body N-Channel P-Channel N-Channel P-Channel
1.75mm height (max) (V) (V) () ()
1.27mm pitch

TC1550 TC1550TG-G 500 -500 60 125
-G indicates package is RoHS compliant (`Green')

Pin Configuration
DP
DP
DN
DN

GP
Absolute Maximum Ratings SP
GN
Parameter Value SN

Drain-to-source voltage BVDSS 8-Lead SOIC (TG)
(top view)
Drain-to-gate voltage BVDGS
Gate-to-source voltage