Text preview for : ssh4n80as.pdf part of Samsung ssh4n80as . Electronic Components Datasheets Active components Transistors Samsung ssh4n80as.pdf
Back to : ssh4n80as.pdf | Home
Advanced Power MOSFET SSH4N80AS
FEATURES
BVDSS = 800 V
Avalanche Rugged Technology
Rugged Gate Oxide Technology
RDS(on) = 3.0
Lower Input Capacitance ID = 4.5 A
Improved Gate Charge
Extended Safe Operating Area
Lower Leakage Current : 25