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2SB1188
Epitaxial Planar PNP Transistors SOT-89
1
2
1. BASE 3
2. COLLECTOR
3. EMITTER
ABSOLUTE MAXIMUM RATINGS (Ta=25% )
C
Rating Symbol Limits Unit
Collector-Base Voltage VCBO -40 Vdc
Collector-Emitter Voltage VCEO -32 Vdc
Emitter-Base Voltage VEBO -5 Vdc
IC -2 A(DC)
Collector Current
ICP -3 A (Pulse)*
Collector Power Dissipation PC 0.5 W
Junction Temperature, Storage Temperature T j, Tstg 150, -55 to +150 %
C
* Single pulse Pw = 100ms
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted )
C
Parameter Symbol Min Typ Max Unit
Collector-Base Breakdown Voltage (Ic=-50uA) BVCBO -40 - - V
Collector-Emitter Breakdown Voltage (Ic=-1mA) BVCEO -32 - - V
Emitter-Base Breakdown Voltage (I E =-50uA) BVEBO -5 - - V
Collector Cutoff Current (VCB=-20) ICBO - - -1 uA
Emitter Cutoff Current (VEB=-4V) IEBO - - -1 uA
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2SB1188
ELECTRICAL CHARACTERISTICS (Ta=25% unless otherwise noted ) (Countinued)
C
Parameter Symbol Min Typ Max Unit
DC Current Gain (VCE=-3V, Ic=-0.5A) h FE 82 - 390 -
Collector-Emitter Saturation Voltage (Ic=-2A, IB =-0.2A) VCE(sat) - - -0.8 V
Transition Frequency (vCE=-5v, IE=0.5A, f=30MHz) fT 80 100 - MHz
Output Capacitancen (VCB =-10V, I E =0A, f=1MHz) Cob - - 65 pF
CLASSIFICATION OF hFE
Marking BCP BCQ BCR
Rank P Q R
Range 82-180 120-270 180-390
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2SB1188
ELECTRICAL CHARACTERISTIC CURVES
-0.5
V C E =-3V T a=25 C -2 .5 mA -2. 25 mA
C OLLE C T OR C UR R E NT : I C (A)
T a=100 C
C OLLE C TOR C UR R E NT : IC (mA)
-1000
25 C -2mA
-500 -0.4
40 C
-1. 75mA
-200
-1. 5mA
-100 -0.3
-1. 25mA
-50
-1mA
-20 -0.2
-750 A
-10
-5 -500 A
-0.1
-2 -250 A
-1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 0 I B =0A
0 -0.4 -0.8 -1.2 -1.6 -2
B AS E T O E MIT T E R V O L T AG E : V B E (V )
C O LLE C T O R T O E MIT T E R V O LT AG E : V C E (V )
F IG .1 G rounded emitter propagation
characteris tics F IG .2 G rounded emitter output
characteris tics
500 T a =25 C 500 V C E =-3V
T a =100 C
V C E =6V 25 C
3V
DC C UR R E NT G AIN : hF E
DC C UR R E NT G AIN : hFE
25 C
1V
200 200
100 100
50 50
20 20
-5 -10 -20 -50 -100 -200 -500 -1000 -2000 -5 -10 -20 -50 -100 -200 -500 -1000 -2000
C O L L E C T O R C UR R E NT : I C (mA) C O L L E C T O R C UR R E NT : I C (mA)
F IG .3 DC current gain vs . F IG .4 DC current gain vs .
collector current collector current
C OLLE C TOR S ATUR ATION VOLTAG E : V C E (sat) (mV)
C OLLE C TOR S ATUR ATION VOLTAGE : V C E (sat) (mV)
-500 lC /lB =10
-500 T a =25 C
-200 -200
-100
T a =100 C
-100
I C /I B =50 25 C
40 C
-50
-50 20
10 -20
-5 -10 -20 -50 -100 -200 -500 -1000 -2000 -5 -10 -20 -50 -100 -200 -500 -1000 -2000
C O L L E C T O R C UR R E NT : I C (mA) C O LLE C T O R C UR R E NT : I C (mA)
F IG .5 C ollector-emitter s aturation F IG .6 C ollector-emitter s aturation
voltage vs . collector current voltage vs . collector current
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2SB1188
B AS E S ATUR ATION VOLTAG E : V B E (sat) (V)
T a =25 C 500 T a =25 C
TR ANS ITION F R E QUE NC Y : fT (MHz)
V C E =-5V
-1
I C /I B =10
200
-0.5
100
-0.2
50
-0.1
-0.05
--5 -10 -20 -50 -100 -200 -500 -1000 -2000 5 10 20 50 100 200 500 1000 2000
C O LLE T O R C UR R E NT : I C (mA)
E MIT T E R C UR R E NT : I E (mA)
F IG .7 B as e-emitter s aturation voltage F IG .8 G ain bandwidth product vs .
vs . collector current emitter current
-5
I C Max. (puls e)
C OLLE C TOR OUTPUT C APAC ITANC E : C ob (pF)
: C ib (pF)
300 T a =25 C
C ib f =1MHz
C OLLE C T OR C UR R E NT : I C (A)
200 I E =0A -2
PW
I C =0A
PW
=1
=1 *
-1
0
100
0m
0m
s
-0.5 s*
E MITTE R INPUT C APAC ITANC E
C ob
50
DC
-0.2
20
-0.1
10
-0.05
T a =25 C
*S ingle
-0.02 nonrepetitive
-0.01 puls e
-0.5 -1 -2 -5 -10 -20 -30
C O L L E C T O R T O B AS E V O L T AG E : V C B (V ) -0.1 -0.2 -0.5 -1 -2 -5 -10 -20 -50
E MIT T E R T O B AS E V O L T AG E : V E B (V )
C OLLE C T OR T O E MIT T E R V OLT AG E : V C E (V )
F IG .9 C ollector output capacitance vs .
collector-bas e voltage
F IG .10 S afe operation area
E mitter input capacitance vs .
emitter-bas e voltage
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2SB1188
SOT-89 Outline Dimensions unit:mm
SOT-89
E Dim Min Max
G A A 1.400 1.600
B 0.320 0.520
C 0.360 0.560
H D 0.350 0.440
J C E 4.400 4.600
G 1.400 1.800
H 2.300 2.600
B D J 3.940 4.250
K
K 1.500TYP
L 3.100
L 2.900
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