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Philips Semiconductors Product specification

PowerMOS transistor PHP2N50

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope featuring high VDS Drain-source voltage 500 V
avalanche energy capability, stable ID Drain current (DC) 2 A
off-state characteristics, fast Ptot Total power dissipation 50 W
switching and high thermal cycling RDS(ON) Drain-source on-state resistance 5
performance with low thermal
resistance. Intended for use in
Switched Mode Power Supplies
(SMPS), motor control circuits and
general purpose switching
applications.

PINNING - TO220AB PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d
tab

1 gate
2 drain
g
3 source
tab drain
1 23 s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
ID Continuous drain current Tmb = 25