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DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ103AX
Silicon Diffused Power Transistor
Product specification August 1998
Philips Semiconductors Product specification
Silicon Diffused Power Transistor BUJ103AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 700 V
VCBO Collector-Base voltage (open emitter) - 700 V
VCEO Collector-emitter voltage (open base) - 400 V
IC Collector current (DC) - 4 A
ICM Collector current peak value - 8 A
Ptot Total power dissipation Ths 25