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SEMICONDUCTOR KTC4075F
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR


GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.

FEATURES
E
Excellent hFE Linearity
B
: hFE(0.1mA)/hFE(2mA)=0.95(Typ.).
High hFE : hFE=70~700.
Low Noise : NF=1dB(Typ.), 10dB(Max.). 2 DIM MILLIMETERS




A
G




D
A _
0.6 + 0.05
Complementary to KTA2014F. 3 B _
0.8 + 0.05




K
Thin Fine Pitch Small Package. 1 C 0.38+0.02/-0.04
D _
0.2 + 0.05
E _
1.0 + 0.05
G _
0.35+ 0.05
J _
0.1 + 0.05
K _
0.15 + 0.05




C
MAXIMUM RATING (Ta=25 )




J
CHARACTERISTIC SYMBOL RATING UNIT
1. EMITTER
Collector-Base Voltage VCBO 60 V
2. BASE
Collector-Emitter Voltage VCEO 50 V 3. COLLECTOR

Emitter-Base Voltage VEBO 5 V
Collector Current IC 150 mA TFSM

Base Current IB 30 mA
Collector Power Dissipation PC 50 mW
Junction Temperature Tj 150
Marking Type Name
Storage Temperature Range Tstg -55 150



L h FE Rank




ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE (Note) VCE=6V, IC=2mA 70 - 700
Collector-Emitter Saturation Voltage VCE(sat) IC=100mA, IB=10mA - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1mA 80 - - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 2.0 3.5 pF
VCE=6V, IC=0.1mA,
Noise Figure NF - 1.0 10 dB
f=1kHz, Rg=10k
Note : hFE Classification O(2):70 140, Y(4):120 240, GR(6):200 400, BL(8):350~700




2005. 4. 21 Revision No : 0 1/3
KTC4075F


I C - V CE h FE - I C
240 1k
COMMON EMITTER COMMON EMITTER
6.0 5.0
COLLECTOR CURRENT I C (mA)




Ta=25 C
200 500
3.0




DC CURRENT GAIN h FE
2.0
300
Ta=100 C VCE =6V
160
Ta=25 C
1.0 Ta=-25 C
120 100
0.5 50
80
I B =0.2mA
30
VCE =1V
40

0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300

COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA)




V CE(sat) - I C V BE(sat) - I C
COLLECTOR-EMITTER SATURATION




1 10
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION




I C /I B =10 I C /I B =10
0.5 5
Ta=25 C
VOLTAGE VCE(sat) (V)




VOLTAGE VBE(sat) (V)




0.3 3


C
0.1 00 1
=1
Ta
0.05 0.5
Ta=25 C
0.03 0.3
Ta=-25 C


0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300

COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)




fT - IC I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)




COMMON EMITTER COMMON
V CE =10V EMITTER
1k
Ta=25 C
BASE CURRENT I B (