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BDW93CFP
BDW94CFP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s MONOLITHIC DARLINGTON
CONFIGURATION
s COMPLEMENTARY PNP - NPN DEVICES
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s FULLY MOLDED ISOLATED PACKAGE
s 2000 V DC ISOLATION (U.L. COMPLIANT)
3
APPLICATIONS 2
1
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
T0-220FP
DESCRIPTION
The BDW93CFP, is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
and is mounted in TO-220FP fully molded
isolated package. It is intented for use in power
linear and switching applications. INTERNAL SCHEMATIC DIAGRAM
The complementary PNP type is the BDW94CFP.

R1 Typ. = 10 K R 2 Typ. = 150

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Uni t
NPN BDW 93CFP
PNP BDW 94CFP
V CBO Collector-Base Voltage (IE = 0) 100 V
V CEO Collector-Emitter Voltage (I B = 0) 100 V
IC Collector Current 12 A
I CM Collector Peak Current 15 A
IB Base Current 0.2 A
P t ot Total Dissipation at T c 25 C o
33 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. O perating Junction Temperature 150 C
For PNP types voltage and current values are negative.

April 1998 1/4
BDW93CFP / BDW94CFP

THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case 3.8 C/W

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CBO Collector Cut-off V CB = 100 V 100