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STL52N25M5
N-channel 250 V, 0.055 , 28 A, PowerFLATTM (5x6)
MDmeshTM V Power MOSFET
Features
RDS(on)
Type VDSS ID(1)
max.
STL52N25M5 250 V < 0.065 28 A
1. This value is rated according Rthj-case.
Amongst the best RDS(on)* area
Very low profile package (1 mm max.)
PowerFLATTM (5x6)
Excellent switching performance
High dv/dt capability
100% avalanche tested
Application
Switching applications Figure 1. Internal schematic diagram
Description
This device is N-channel MDmeshTM V Power
MOSFET based on an innovative proprietary
vertical process technology, which is combined
with STMicroelectronics' well-known
PowerMESHTM horizontal layout structure. The
resulting product has extremely low on-
resistance, which is unmatched among silicon-
based Power MOSFETs, making it especially
suitable for applications which require superior
power density and outstanding efficiency.
Table 1. Device summary
Order code Marking Package Packaging
STL52N25M5 52N25M5 PowerFLATTM (5x6) Tape and reel
September 2010 Doc ID 17819 Rev 1 1/12
www.st.com 12
Contents STL52N25M5
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuits .............................................. 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12 Doc ID 17819 Rev 1
STL52N25M5 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VGS Gate- source voltage 25 V
(1)
ID Drain current (continuous) at TC = 25