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SEMICONDUCTOR KTB631K
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
LOW FREQUENCY POWER AMP, A
MEDIUM SPEED SWITCHING APPLICATIONS B D
C
E
FEATURES
F
High breakdown voltage VCEO 120V, high current 1A.
Low saturation voltage and good linearity of hFE. G
H
DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
MAXIMUM RATING (Ta=25 ) C 0.7
D _
3.2 + 0.1
CHARACTERISTIC SYMBOL RATING UNIT E 3.5
F _
11.0 + 0.3
Collector-Base Voltage VCBO -120 V M
G 2.9 MAX
H 1.0 MAX
Collector-Emitter Voltage VCEO -120 V J 1.9 MAX
O K _
0.75 + 0.15
N P
L _
15.50 + 0.5
Emitter-Base Voltage VEBO -5 V 1 2 3
_
M 2.3 + 0.1
N _
0.65 + 0.15
IC -1 1. EMITTER O 1.6
Collector Current A 2. COLLECTOR P 3.4 MAX
ICP -2 3. BASE
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 8 TO-126
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut of Current ICBO VCB=-50V, IE=0 - - -1 A
Emitter Cut of Current IEBO VEB=-4V, IC=0 - - -1 A
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A -120 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-1mA -120 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A -5 - - V
hFE(1) Note VCE=-5V, IC=-50mA 100 - 320
DC Current Gain
hFE(2) VCE=-5V, IC=-500mA 20 - -
Gain Bandwidth Product fT VCE=-10V, IC=-50mA - 110 - MHz
Output Capacitance Cob VCB=-10V, f=1MHz - 30 - pF
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-50mA - -0.15 -0.4 V
Base-Emitter Saturation Voltage VBE(sat) IC=-500mA, IB=-50mA - -0.85 -1.2 V
I B2
Turn-on Time ton I B1 - 80 -
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