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BUJ103A
Silicon diffused power transistor
Rev. 03 -- 3 March 2005 Product data sheet
1. Product profile
1.1 General description
High-voltage, high-speed planar-passivated NPN power switching transistor in a SOT78
(TO-220AB) plastic package.
1.2 Features
s Low thermal resistance s Fast switching
1.3 Applications
s Electronic lighting ballasts s DC-to-DC converters
s Inverters s Motor control systems
1.4 Quick reference data
s VCESM 700 V s IC 4 A
s Ptot 80 W s hFEsat = 12.5 (typ)
2. Pinning information
Table 1: Pinning
Pin Description Simplified outline Symbol
1 base
mb 2
2 collector
3 emitter 1
mb mounting base; connected to collector
3
sym056
1 2 3
SOT78 (TO-220AB)
Philips Semiconductors BUJ103A
Silicon diffused power transistor
3. Ordering information
Table 2: Ordering information
Type number Package
Name Description Version
BUJ103A TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-leads SOT78
4. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCESM peak collector-emitter voltage VBE = 0 V - 700 V
VCBO collector-base voltage open emitter - 700 V
VCEO collector-emitter voltage open base - 400 V
IC collector current (DC) - 4 A
ICM peak collector current - 8 A
IB base current (DC) - 2 A
IBM peak base current - 4 A
Ptot total power dissipation Tmb 25