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PBSS5350D
57
T4
SO
50 V, 3 A PNP low VCEsat (BISS) transistor
Rev. 6 -- 28 June 2011 Product data sheet

1. Product profile

1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a small
SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4350D

1.2 Features and benefits
Low collector-emitter saturation AEC-Q101 qualified
voltage VCEsat Smaller Printed-Circuit Board (PCB)
High current capability area than for conventional transistors
High efficiency due to less heat
generation

1.3 Applications
Supply line switching circuits DC-to-DC conversion
Battery management applications

1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter open base - - -50 V
voltage
IC collector current - - -3 A
ICM peak collector current - - -5 A
RCEsat collector-emitter IC = -2 A; IB = -200 mA; pulsed; - 120 150 m
saturation resistance tp 300