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STS8DNF3LL
Dual N-channel 30V - 0.017 - 8A SO-8
Low gate charge STripFETTM II Power MOSFET
General features
Type VDSS RDS(on) ID
STS8DNF3LL 30V <0.020 8A
Optimal RDS(on) x Qg trade-off @ 4.5V
Conduction losses reduced
S0-8
Switching losses reduced
Description
This application specific Power MOSFET is the
second generation of STMicroelectronics unique
"Single Feature SizeTM" strip-based process. The
resulting transistor shows the best trade-off Internal schematic diagram
between on-resistance and gate charge. When
used as high and low side in buck regulators, it
gives the best performance in terms of both
conduction and switching losses. This is
extremely important for motherboards where fast
switching and high efficiency are of paramount
importance.
Applications
Switching application
Order codes
Part number Marking Package Packaging
STS8DNF3LL S8DNF3LL SO-8 Tape & reel
January 2007 Rev 10 1/12
www.st.com 12
Contents STS8DNF3LL
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ............................ 6
3 Test circuit ................................................ 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2/12
STS8DNF3LL Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (vgs = 0) 30 V
VGS Gate- source voltage