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WTM1766
NPN EPITAXIAL PLANAR TRANSISTOR
P b Lead(Pb)-Free 1. BASE
2. COLLECTOR
3. EMITTER 1
2
3
SOT-89
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Parameter Symbol Value Units
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 32 V
Emitter-Base Voltage VEBO 5.0 V
Collector Current -Continuous IC 2.0 A
Collector Power dissipation PC 500 mW
Junction Temperature TJ 150
Storage Temperature Tstg -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=50A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 32 V
Emitter-base breakdown voltage V(BR)EBO IE=50A, IC=0 5 V
Collector cut-off current ICBO VCB=20V, IE=0 1 A
Emitter cut-off current IEBO VEB=4V, IC=0 1 A
DC current gain hFE(1) VCE=3V, IC=500mA 82 390
Collector-emitter saturation voltage VCE(sat) IC=2A, IB=0.2A 0.8 V
Transition frequency fT VCE=5V, IC=50mA, f=100MHz 100 MHz
Collector output capacitance Cob VCB=10V, IE=0, f=1MHz 30 pF
CLASSIFICATION OF hFE(1)
Rank P Q R
Range 82-180 120-270 180-390
Marking DBP DBQ DBR
WEITRON 1/3 04-Dec-08
http://www.weitron.com.tw
WTM1766
Typical Characteristics
WEITRON 2/3 04-Dec-08
http://www.weitron.com.tw
WTM1766
SOT-89 Outline Dimensions unit:mm
SOT-89
E Dim Min Max
G A A 1.400 1.600
B 0.320 0.520
C 0.360 0.560
H
D 0.350 0.440
J C E 4.400 4.600
G 1.400 1.800
H 2.300 2.600
B D J
K
3.940 4.250
K 1.500TYP
L
L 2.900 3.100
WEITRON 3/3 04-Dec-08
http://www.weitron.com.tw