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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUW14

GENERAL DESCRIPTION
High-voltage, high-speed, glass passivated npn power transistor in a SOT82 envelope intended for use in
converters, inverters, switching regulators, motor control systems and switching applications.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 0.5 A
ICM Collector current peak value - 1 A
Ptot Total power dissipation Tmb 60