2n7000.pdf part of LGE 2n7000 2n7000.pdf, . Electronic Components Datasheets Active components Transistors LGE 2n7000.pdf text manual preview

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2N7000
Mosfet (N-Channel)

1. SOURCE TO-92
2. GATE

3. DRAIN

Features
High density cell design for low RDS(ON)
Voltage controlled small signal switch
Rugged and reliable
High saturation current capability

MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VDS Drain-Source voltage 60 V Dimensions in inches and (millimeters)
ID Drain Current 200 mA
PD Power Dissipation 350 mW
RJA Thermal Resistance, junction to Ambient 357 /W
TJ Junction Temperature 150
Tstg Storage Temperature -55-150

ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)

Parameter Symbol Test conditions MIN TYP MAX UNIT

Drain-Source Breakdown Voltage V(BR)DSS VGS=0 V, ID=10A 60
V
Gate-Threshold Voltage* Vth(GS) VDS=VGS, ID=1mA 0.8
Gate-body Leakage lGSS VDS=0 V, VGS=