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Philips Semiconductors Product specification

PowerMOS transistor BUK436W-1000B

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope. VDS Drain-source voltage 1000 V
The device is intended for use in ID Drain current (DC) 3.1 A
Switched Mode Power Supplies Ptot Total power dissipation 125 W
(SMPS), motor control, welding, RDS(ON) Drain-source on-state 5
DC/DC and AC/DC converters, and resistance
in general purpose switching
applications.

PINNING - SOT429 (TO247) PIN CONFIGURATION SYMBOL
PIN DESCRIPTION d

1 gate
2 drain
g
3 source
tab drain 1 2 3
s

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 1000 V
VDGR Drain-gate voltage RGS = 20 k - 1000 V