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2SA1873
DUAL TRANSISTOR (PNP+ PNP)

Features
Small package (dual type) SOT-353
High voltage and high current
High hFE
Excellent hFE linearity
Complementary to 2SC4944 1

MARKING: SY SGR

MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Symbol Parameter Value Units
VCBO Collector-Base Voltage -50 V
VCEO Collector-Emitter Voltage -50 V
VEBO Emitter-Base Voltage -5 V
IC Collector Current -Continuous -150 mA
PC Collector Power Dissipation 200 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55 to150

ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)

Parameter Symbol Test conditions Min Typ M ax Unit
Collector-base breakdown voltage V(BR)CBO IC=-100A,IE=0 -50 V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -50 V
Emitter-base breakdown voltage V(BR)EBO IE=-10A,IC=0 -5 V
Collector cut-off current ICBO VCB=-50V,IE=0 -0.1 A
Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 A
DC current gain hFE VCE=-6V,IC=-2mA 120 400
Collector-emitter saturation voltage VCE(sat) IC=-100mA,IB=-10mA -0.3 V
Transition frequency fT VCE=-10V,IC=-1mA 80 MHz
Collector output capacitance Cob VCB=-10V,IE=0,f=1MHz 7 pF

CLASSIFICATION OF hFE
Rank Y GR

Range 120-240 200-400

Marking SY SGR

1
JinYu www.htsemi.com
semiconductor

Date:2011/ 05