phd10n10e_1.pdf part of Philips phd10n10e 1 phd10n10e_1.pdf, . Electronic Components Datasheets Active components Transistors Philips phd10n10e

Text preview for : phd10n10e_1.pdf part of Philips phd10n10e 1 . Electronic Components Datasheets Active components Transistors Philips phd10n10e_1.pdf

Back to : phd10n10e_1.pdf | Home

Philips Semiconductors Product Specification

PowerMOS transistor PHD10N10E

GENERAL DESCRIPTION QUICK REFERENCE DATA
N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT
field-effect power transistor in a
plastic envelope suuitable for VDS Drain-source voltage 100 V
surface mounting. The device is ID Drain current (DC) 11 A
intended for use in Switched Mode Ptot Total power dissipation 60 W
Power Supplies (SMPS), motor Tj Junction temperature 175