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BCP195
PNP Silicon Planar
Medium Power Transistor
RoHS Compliant Product

SOT-89
Description

The BCP195 is designed for medium power
amplifier applications. 1
2
3

1.BASE
2.COLLECTOR
Features
3.EMITTER

* 1Amp Continuous Current
* -60V VCEO
* Complementary TO BCP194

REF. Millimeter REF. Millimeter
Min. Max. Min. Max.
A 4.4 4.6 G 3.00 REF.
B 4.05 4.25 H 1.50 REF.
C 1.50 1.70 I 0.40 0.52
D 1.30 1.50 J 1.40 1.60
E 2.40 2.60 K 0.35 0.41
F 0.89 1.20 L 5 q TYP.
M 0.70 REF.

o
Absolute Maximum Ratings at Ta=25 C
Parameter Symbol Value Unit
Collector-Base Voltage VCBO -80 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V
Collector Current (DC) IC -1 A
Collector Current (Pulse) IC -2 A
Base Current IB -200 mA
Total Power Dissipation PD 1 W
Operating Junction and Storage Temperature TJ,TSTG +150,-55 ~ +150 o
C

o
Electrical Characteristics (Ta=25 C, unless otherwise stated)
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector-Base Breakdown Voltage BVCBO -80 - - V IC=-100