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SEMICONDUCTOR KTA1272
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURES B
High hFE : hFE=100 320.
A
Complementary to KTC3204.
O DIM MILLIMETERS
F
A 3.20 MAX
H M B 4.30 MAX
C 0.55 MAX
G
D _
2.40 + 0.15
MAXIMUM RATING (Ta=25 ) E 1.27
F 2.30
C _
CHARACTERISTIC SYMBOL RATING UNIT G 14.00+ 0.50
H 0.60 MAX
Collector-Base Voltage VCBO -35 V J 1.05
E E
K 1.45
L 25
Collector-Emitter Voltage VCEO -30 V
J
M 0.80
D
K
1 2 3 N N 0.55 MAX
Emitter-Base Voltage VEBO -5 V O 0.75
L
Collector Current IC -800 mA
1. EMITTER
Emitter Current IE 800 mA 2. COLLECTOR
3. BASE
Collector Power Dissipation PC 400 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150 TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=-30V, IE=0 - - -100 nA
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA
Collector-Emitter Breakdown Voltage V(BR)CEO IC=-10mA, IB=0 -30 - - V
hFE(1) (Note) VCE=-1V, IC=-100mA 100 - 320
DC Current Gain
hFE(2) VCE=-1V, IC=-700mA 35 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=-500mA, IB=-20mA - - -0.7 V
Base-Emitter Voltage VBE VCE=-1V, IC=-10mA -0.5 - -0.8 V
Transition Frequency fT VCE=-5V, IC=-10mA - 120 - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - 19 - pF
Note : hFE(1) Classification 0:100 200, Y:160 320
1994. 3. 24 Revision No : 0 1/1