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SEMICONDUCTOR KHB9D0N50P1/F1/F2
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KHB9D0N50P1
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS(Min.)= 500V, ID= 9A
Drain-Source ON Resistance :
RDS(ON)=0.8 @VGS =10V
Qg(typ.) =34.6nC
MAXIMUM RATING (Tc=25 )
RATING
CHARACTERISTIC SYMBOL KHB9D0N50F1 UNIT
KHB9D0N50P1
KHB9D0N50F2
KHB9D0N50F1
Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS 30 V
@TC=25 9 9*
ID
Drain Current @TC=100 5.4 5.4* A
Pulsed (Note1) IDP 36 36*
Single Pulsed Avalanche Energy
EAS 360 mJ
(Note 2)
Repetitive Avalanche Energy
EAR 13.5 mJ
(Note 1)
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
Drain Power Tc=25 135 44 W
PD
Dissipation Derate above25 1.07 0.35 W/
Maximum Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Thermal Characteristics KHB9D0N50F2
Thermal Resistance, Junction-to-Case RthJC 0.93 2.86 /W
Thermal Resistance, Case-to-Sink RthCS 0.5 - /W
Thermal Resistance, Junction-to-
RthJA 62.5 62.5 /W
Ambient
* : Drain current limited by maximum junction temperature.
PIN CONNECTION
2007. 5. 10 Revision No : 0 1/7
KHB9D0N50P1/F1/F2
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 A, VGS=0V 500 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 A, Referenced to 25 - 0.57 - V/
Drain Cut-off Current IDSS VDS=500V, VGS=0V, - - 10 A
Gate Threshold Voltage Vth VDS=VGS, ID=250 A 2.0 - 4.0 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=4.5A - 0.65 0.8
Dynamic
Total Gate Charge Qg - 34.6 40
VDS=400V, ID=9A
Gate-Source Charge Qgs - 5.9 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 15.5 -
Turn-on Delay time td(on) - 23 45
VDD=200V
Turn-on Rise time tr - 65 140
RL=22 ns
Turn-off Delay time td(off) - 148 241
RG=25 (Note4,5)
Turn-off Fall time tf - 81 140
Input Capacitance Ciss - 1389 1805
Reverse Transfer Capacitance Crss VDS=25V, VGS=0V, f=1.0MHz - 19.2 24.9 pF
Output Capacitance Coss - 155.7 202
Source-Drain Diode Ratings
Continuous Source Current IS - - 9
VGS Pulsed Source Current ISP - - 36
Diode Forward Voltage VSD IS=9A, VGS=0V - - 1.5 V
Reverse Recovery Time trr IS=9A, VGS=0V, - 357 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ s - 4.87 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L = 8mH, IS=9A, VDD=50V, RG = 25 , Starting Tj = 25 .
Note 3) IS 9A, dI/dt 200A/ , VDD BVDSS, Starting Tj = 25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
2007. 5. 10 Revision No : 0 2/7
KHB9D0N50P1/F1/F2
2007. 5. 10 Revision No : 0 3/7
KHB9D0N50P1/F1/F2
2007. 5. 10 Revision No : 0 4/7
KHB9D0N50P1/F1/F2
2007. 5. 10 Revision No : 0 5/7
KHB9D0N50P1/F1/F2
2007. 5. 10 Revision No : 0 6/7
KHB9D0N50P1/F1/F2
2007. 5. 10 Revision No : 0 7/7