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STQ1NC60R
N-CHANNEL 600V - 12 - 0.3A TO-92
PowerMESHTMII Power MOSFET
TYPE VDSS RDS(on) ID
STQ1NC60R 600 V < 15 0.3 A
s TYPICAL RDS(on) = 12
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s NEW HIGH VOLTAGE BENCHMARK
s GATE CHARGE MINIMIZED
TO-92 TO-92
BULK (AMMOPACK)
DESCRIPTION
Using the latest high voltage MESH OVERLAYTMII
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstanding
performances. The new patent pending strip layout
coupled with the Company's proprietary edge termi-
nation structure, gives the lowest RDS(on) per area,
exceptional avalanche and dv/dt capabilities and INTERNAL SCHEMATIC DIAGRAM
unrivalled gate charge and switching characteris-
tics.
APPLICATIONS
s LOW SWITCH MODE POWER SUPPLIES
(SMPS)
s BATTERY CHARGER
ORDERING INFORMATION
SALES TYPE MARKING PACKAGE PACKAGING
STQ1NC60R Q1NC60R TO-92 BULK
STQ1NC60R-AP Q1NC60R TO-92 AMMOPACK
July 2003 1/9
STQ1NC60R
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 600 V
VDGR Drain-gate Voltage (RGS = 20 k) 600 V
VGS Gate- source Voltage