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SEMICONDUCTOR KTN2907AE
TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
E
FEATURES B
Low Leakage Current
: ICEX=-50nA(Max.) ; VCE=-30V, VEB=-0.5V. 2
D DIM MILLIMETERS
A _
1.60 + 0.10
G
A
Low Saturation Voltage 1 3 B _
0.85 + 0.10
H
C _
0.70 + 0.10
: VCE(sat)=-0.4V(Max.) ; IC=-150mA, IB=-15mA.
D 0.27+0.10/-0.05
Complementary to the KTN2222AE. E _
1.60 + 0.10
G _
1.00 + 0.10
H 0.50
J _
0.13 + 0.05
J
C
1. EMITTER
MAXIMUM RATING (Ta=25 ) 2. BASE
CHARACTERISTIC SYMBOL RATING UNIT 3. COLLECTOR
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -60 V
Emitter-Base Voltage VEBO -5 V ESM
Collector Current IC -600 mA
Collector Power Dissipation (Ta=25 ) PC 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
Marking
ZH
2004. 1. 29 Revision No : 0 1/4
KTN2907AE
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICEX VCE=-30V, VEB=-0.5V - - -50 nA
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -10 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=-10 A, IE=0 -60 - - V
Collector-Emitter Breakdown Voltage * V(BR)CEO IC=-10mA, IB=0 -60 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE=-10 A, IC=0 -5 - - V
hFE(1) IC=-0.1mA, VCE=-10V 75 - -
hFE(2) IC=-1.0mA, VCE=-10V 100 - -
DC Current Gain * hFE(3) IC=-10mA, VCE=-10V 100 - -
hFE(4) IC=-150mA, VCE=-10V 100 - 300
hFE(5) IC=-500mA, VCE=-10V 50 - -
VCE(sat)1 IC=-150mA, IB=-15mA - - -0.4
Collector-Emitter Saturation Voltage * V
VCE(sat)2 IC=-500mA, IB=-50mA - - -1.6
VBE(sat)1 IC=-150mA, IB=-15mA - - -1.3
Base-Emitter Saturation Voltage * V
VBE(sat)2 IC=-500mA, IB=-50mA - - -2.6
Transition Frequency fT VCE=-20V, IC=-50mA, f=100MHz 200 - - MHz
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1MHz - - 8 pF
Input Capacitance Cib VBE=-2V, IC=0, f=1.0MHz - - 30 pF
Delay Time td VCC=-30V, IC=-150mA - - 10
Switching Rise Time tr IB1=-15mA - - 40
nS
Time Storage Time tstg VCC=-6V, IC=-150mA - - 80
Fall Time tf IB1=-IB2=-15mA - - 30
* Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
2004. 1. 29 Revision No : 0 2/4
KTN2907AE
I C - VCE h FE - I C
-1000 1K
VCE =-10V
COLLECTOR CURRENT I C (mA)
COMMON EMITTER
Ta=25 C 500
DC CURRENT GAIN h FE
-800
I B =-40mA 300
Ta=75 C
I B =-30mA Ta=25 C
-600 I B =-20mA Ta=-25 C
I B =-10mA 100
-400 I B =-5mA 50
30
-200
10
0 -0.4 -0.8 -1.2 -1.6 -1.8 -0.5 -1 -3 -10 -30 -100 -300 -1K
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C V BE(sat) - I C
COLLECTOR-EMITTER SATURATION
-1.0 -1.6
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B =10 -1.4 I C /IB =10
-0.8
VOLTAGE VCE(sat) (V)
VOLTAGE VBE(sat) (V)
-1.2
VBE(sat)
-0.6 -1.0
Ta=-25 C
-0.8
Ta=25 C
-0.4 -0.6
Ta=75 C
-0.4
-0.2
VCE(sat)
-0.2
0 0
-0.5 -1 -3 -10 -30 -100 -300 -1K -0.5 -1 -3 -10 -30 -100 -300 -1K
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
I C - V BE f T - IC
1000
TRANSITION FREQUENCY f T (MHz)
-500
COMMON EMITTER Ta=25 C
-300
VCE =10V
VCE =-10V
COLLECTOR CURRENT I C (mA)
-100
-30
Ta=75 C 100
-10
C
25
-3
Ta=
Ta=-25 C
-1
-0.3 10
1 10 100 1K 3K
-0.1
-0.05 COLLECTOR CURRENT I C (mA)
-0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0
BASE-EMITTER VOLTAGE VBE (V)
2004. 1. 29 Revision No : 0 3/4
KTN2907AE
Cob - VCB
P C - Ta
COLLECTOR OUTPUT CAPACITANCE Cob (pF)
Cib - VEB
COLLECTOR INPUT CAPACITANCE Cib (pF)
100 200
COLLECTOR POWER DISSIPATION
COMMON EMITTER
f=1MHz, Ta=25 C
30 150
P C (mW)
Cib
10 100
Cob
3.0 50
1.0 0
-0.1 -1.0 -10 -100 -300 0 25 50 75 100 125 150 175
COLLECTOR-BASE VOLTAGE VCB (V) AMBIENT TEMPERATURE Ta ( C)
EMITTER-BASE VOLTAGE VEB (V)
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