std20ne03l.pdf part of ST std20ne03l std20ne03l.pdf, . Electronic Components Datasheets Active components Transistors ST std20ne03l.pdf text manual preview

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STD20NE03L
N - CHANNEL ENHANCEMENT MODE
" SINGLE FEATURE SIZETM " POWER MOSFET
TYPE V DSS R DS(on ) ID
ST D20NE03L 30 V < 0.020 20 A

s TYPICAL RDS(on) = 0.016
s EXCEPTIONAL dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s LOW GATE CHARGE A 100 oC
s APPLICATION ORIENTED 3
CHARACTERIZATION 2 3
1 1
DESCRIPTION
This Power MOSFET is the latest development of
SGS-THOMSON unique "Single Feature SizeTM " IPAK DPAK
strip-based process. The resulting transistor TO-251 TO-252
shows extremely high packing density for low on- (Suffix "-1") (Suffix "T4")
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility. INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS IN HIGH
PERFORMANCE VRMs
s AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (VGS = 0) 30 V
V DGR Drain- gate Voltage (RGS = 20 k) 30 V
V GS Gate-source Voltage