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KTC3202(NPN)
TO-92 Transistors
TO-92
1. EMITTER
2. COLLECTOR
3. BASE
Features
General purpose application switching application
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector-Base Voltage 35 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 500 mA
PC Collector Power Dissipation 625 mW Dimensions in inches and (millimeters)
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS(Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-BASE breakdown voltage V(BR)CBO IC = 0.1mA, IB=0 35 V
Collector-emitter breakdown voltage V(BR)CEO IC = 1mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 0.1mA, IC=0 5 V
Collector cut-off current ICBO VCB= 35V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
hFE(1) VCE= 1V, IC= 100mA 70 400
DC current gain
hFE(2) VCE= 6V, IC= 400mA 25
Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA 0.25 V
Base-Emitter Saturation Voltage VBE VCE=1V, IC= 100mA 1.0 V
Transition frequency fT VCE= 6V, IC= 20mA 300 MHz
Collector Output Capacitance Cob VCB= 6V, IE= 0,f=1 MHz 7.0 pF
CLASSIFICATION OF hFE
Rank O Y GR
Range hFE(1) 70-140 120-240
Range hFE(2) 25 40
KTC3202(NPN)
TO-92 Transistors
Typical Characteristics