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BUH615D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s HIGH VOLTAGE CAPABILITY
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
s U.L. RECOGNISED ISOWATT218 PACKAGE
(U.L. FILE # E81734 (N))
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR 3
2
TV 1
DESCRIPTION
The BUH615D is manufactured using ISOWATT218
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
The BUH series is designed for use in horizontal
deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V CBO Collector-Base Voltage (I E = 0) 1500 V
V CEO Collector-Emitter Voltage (I B = 0) 700 V
V EBO Emitter-Base Voltage (I C = 0) 5 V
IC Collector Current 8 A
I CM Collector Peak Current (t p < 5 ms) 12 A
IB Base Current 5 A
I BM Base Peak Current (t p < 5 ms) 8 A
P tot Total Dissipation at T c = 25 o C 55 W
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
December 1997 1/4
BUH615D
THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 2.3 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I CES Collector Cut-off V CE = 1500 V 0.2 mA
o
Current (V BE = 0) V CE = 1500 V Tj = 125 C 2 mA
I EBO Emitter Cut-off Current V EB = 5 V 300 mA
(I C = 0)
V CE(sat) Collector-Emitter IC = 6 A I B = 2.5 A 1.5 V
Saturation Voltage
V BE(sat) Base-Emitter IC = 6 A I B = 2.5 A 1.3 V
Saturation Voltage
h FE DC Current Gain IC = 6 A V CE = 5 V 4 9
RESISTIVE LOAD V CC = 400 V IC = 6 A
ts Storage Time I B1 = 1.5 A I B2 = -3 A 2.7 3.9