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SEMICONDUCTOR KF1N60D/I
N CHANNEL MOS FIELD
TECHNICAL DATA EFFECT TRANSISTOR
General Description KF1N60D
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
A K DIM MILLIMETERS
avalanche characteristics. It is mainly suitable for switching mode C D L
A _
6.60 + 0.20
power supplies. B _
6.10 + 0.20
C _
5.34 + 0.30
D _
0.70 + 0.20
E _
2.70 + 0.15
FEATURES B
F _
2.30 + 0.10
G 0.96 MAX
VDSS= 600V, ID= 1A
H 0.90 MAX
H
RDS(ON)=10 (Max) @VGS = 10V J J _
1.80 + 0.20
E
G N K _
2.30 + 0.10
Qg(typ) = 4.0nC L _
0.50 + 0.10
F F M M _
0.50 + 0.10
EAS=45mJ N 0.70 MIN
O 0.1 MAX
MAXIMUM RATING (Tc=25 ) 1 2 3 1. GATE
2. DRAIN
CHARACTERISTIC SYMBOL RATING UNIT 3. SOURCE
O
Drain-Source Voltage VDSS 600 V
Gate-Source Voltage VGSS 30 V
@TC=25 1.0
ID DPAK (1)
Drain Current @TC=100 0.63 A
Pulsed (Note1) IDP 2.0
Single Pulsed Avalanche Energy EAS KF1N60I
45 mJ
(Note 2)
A H
Repetitive Avalanche Energy EAR 2 mJ C J
(Note 1)
D
Peak Diode Recovery dv/dt
dv/dt 4.5 V/ns
(Note 3)
B
DIM MILLIMETERS
Drain Power Tc=25 28 W A _
6.6 + 0.2
PD B _
6.1 + 0.2
Dissipation Derate above 25 0.22 W/ M
K
C _
5.34 + 0.3
P
D _
0.7 + 0.2
Maximum Junction Temperature Tj 150 N
E _
9.3 +0.3
E
Tstg F _
2.3 + 0.2
Storage Temperature Range -55 150
G _
0.76 + 0.1
G
Thermal Characteristics H _
2.3 + 0.1
L J _
0.5+ 0.1
F F
Thermal Resistance, Junction-to-Case RthJC 4.5 /W K _
1.8 + 0.2
L _
0.5 + 0.1
Thermal Resistance, Junction-to- _
RthJA 110 /W M 1.0 + 0.1
Ambient 1 2 3 N 0.96 MAX
1. GATE P _
1.02 + 0.3
2. DRAIN
3. SOURCE
PIN CONNECTION
(KF1N60D/I)
IPAK(1)
D
G
S
2010. 9. 27 Revision No : 0 1/6
KF1N60D/I
ELECTRICAL CHARACTERISTICS (Tc=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage BVDSS ID=250 , VGS=0V 600 - - V
Breakdown Voltage Temperature Coefficient BVDSS/ Tj ID=250 , Referenced to 25 - 0.6 - V/
Drain Cut-off Current IDSS VDS=600V, VGS=0V, - - 10
Gate Threshold Voltage Vth VDS=VGS, ID=250 2.5 - 4.5 V
Gate Leakage Current IGSS VGS= 30V, VDS=0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS=10V, ID=0.5A - 8.0 10.0
Dynamic
Total Gate Charge Qg - 4.0 -
VDS=480V, ID=1A
Gate-Source Charge Qgs - 0.7 - nC
VGS=10V (Note4,5)
Gate-Drain Charge Qgd - 2.3 -
Turn-on Delay time td(on) - 10 -
VDD=300V
Turn-on Rise time tr - 10 -
ID=1A ns
Turn-off Delay time td(off) - 15 -
RG=25 (Note4,5)
Turn-off Fall time tf - 15 -
Input Capacitance Ciss - 150 -
Output Capacitance Coss VDS=25V, VGS=0V, f=1.0MHz - 20 - pF
Reverse Transfer Capacitance Crss - 3 -
Source-Drain Diode Ratings
Continuous Source Current IS - - 1
VGS Pulsed Source Current ISP - - 4
Diode Forward Voltage VSD IS=1A, VGS=0V - - 1.4 V
Reverse Recovery Time trr IS=1A, VGS=0V, - 200 - ns
Reverse Recovery Charge Qrr dIs/dt=100A/ - 0.4 - C
Note 1) Repetivity rating : Pulse width limited by junction temperature.
Note 2) L=83mH, IS=1A, VDD=50V, RG=25 , Starting Tj=25 .
Note 3) IS 1A, dI/dt 100A/ , VDD BVDSS, Starting Tj=25 .
Note 4) Pulse Test : Pulse width 300 , Duty Cycle 2%.
Note 5) Essentially independent of operating temperature.
Marking
1 1
KF1N60 KF1N60
D 001 2 I 001 2
1 PRODUCT NAME
2 LOT NO
2010. 9. 27 Revision No : 0 2/6
KF1N60D/I
24
20
16
12
8
4
0.5 1 1.5 2 2.5
0.5A
2010. 9. 27 Revision No : 0 3/6
KF1N60D/I
1A
48V
1.5
1.25
1
0.75
0.5
0.25
10
1
0.1
10-5 10-4 10-3 10-2 10-1 100
2010. 9. 27 Revision No : 0 4/6
KF1N60D/I
2010. 9. 27 Revision No : 0 5/6
KF1N60D/I
2010. 9. 27 Revision No : 0 6/6