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BULK128
High voltage fast-switching
NPN power transistor
Features
High voltage capability
Minimum lot-to-lot spread for reliable operation
Very high switching speed
Applications
3
2
Electronic ballast for fluorescent lighting 1
SOT-82
Description
The device is manufactured using high voltage
multi-epitaxial planar technology for high
switching speeds and medium voltage capability.
It uses a cellular emitter structure with planar Figure 1. Internal schematic diagram
edge termination to enhance switching speeds
while maintaining the wide RBSOA. The device is
designed for use in lighting applications and low
cost switch-mode power supplies.
Table 1. Device summary
Order code Marking Package Packaging
BULK128 BULK128 SOT-82 Tube
June 2008 Rev 2 1/11
www.st.com 11
Contents BULK128
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) ........................ 5
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
2/11
BULK128 Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum rating
Symbol Parameter Value Unit
VCES Collector-emitter voltage (VBE = 0) 700 V
VCEO Collector-emitter voltage (IB = 0) 400 V
VEBO Emitter-base voltage (IC= 0, IB= 2 A, tp< 10