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2SD1119
SOT-89 Transistor(NPN)
1. BASE
1 2. COLLECTOR SOT-89
2 4.6
4.4
B
1.6
3 3. EMITTER 1.4
1.8
1.4
Features 2.6 4.25
2.4 3.75
Low collector-emitter saturation voltage VCE(sat) 0.8
MIN
0.53
Satisfactory operation performances at high efficiency with the low 0.44 0.48 0.40
2x)
0.13 B 0.35
0.37
voltage power supply. 1.5
3.0
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Symbol Parameter Value Units
VCBO Collector- Base Voltage 40 V
VCEO Collector-Emitter Voltage 25 V
VEBO Emitter-Base Voltage 7 V
IC Collector Current -Continuous 3 A
PC Collector Dissipation 500 mW
TJ Junction Temperature 150
Tstg Storage Temperature -55-150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC =100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC =1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=10A, IC=0 7 V
Collector cut-off current ICBO VCB=10V, IE=0 0.1 A
Emitter cut-off current IEBO VEB=6V, IC=0 0.1 A
hFE(1) VCE=2V, IC=500mA 230 600
DC current gain
hFE(2) VCE=2V, IC=2A 150
Collector-emitter saturation voltage VCE(sat) IC=3A, IB=0.1A 1 V
Transition frequency fT VCE=6V, IC=50mA, f=200MHz 150 MHz
Collector output capacitance Cob VCB=20V, f=1MHz 50 pF
CLASSIFICATION OF hFE(1)
Rank Q R
Range 230-380 340-600
Marking TQ TR
2SD1119
SOT-89 Transistor(NPN)
Typical Characteristics