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BF721T1G
PNP Silicon Transistor
Features
These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS
Compliant
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MAXIMUM RATINGS
Rating Symbol Value Unit
PNP SILICON TRANSISTOR
Collector -- Emitter Voltage VCEO --300 Vdc
SURFACE MOUNT
Collector -- Base Voltage VCBO --300 Vdc
Collector -- Emitter Voltage VCER --300 Vdc
COLLECTOR 2,4
Emitter -- Base Voltage VEBO --5.0 Vdc
Collector Current IC --50 mAdc
BASE
Total Power Dissipation up to TA = 25C PD 1.5 W 1
(Note 1)
Storage Temperature Range Tstg --65 to +150 C EMITTER 3
Junction Temperature TJ 150 C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit MARKING
DIAGRAM
Thermal Resistance, RJA 83.3 C/W
Junction--to--Ambient (Note 1) 1
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the AYW
Recommended Operating Conditions may affect device reliability. DF G
1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. SOT-
-223 (TO-
-261) G
x 0.059 in.; mounting pad for the collector lead min. 0.93 in2. CASE 318E 1
STYLE 1
A = Assembly Location
Y = Year
W = Work Week
DF = Device Code
G = Pb--Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device Package Shipping
BF721T1G SOT--223 1000 / Tape & Reel
(Pb--Free)
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Semiconductor Components Industries, LLC, 2010 1 Publication Order Number:
September, 2010 - Rev. 9
- BF721T1/D
BF721T1G
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage V(BR)CEO -- 300 -- Vdc
(IC = --1.0 mAdc, IB = 0)
Collector-Base Breakdown Voltage V(BR)CBO --300 -- Vdc
(IC = --100 mAdc, IE = 0)
Collector-Emitter Breakdown Voltage V(BR)CER --300 -- Vdc
(IC = --100 mAdc, RBE = 2.7 k)
Emitter-Base Breakdown Voltage V(BR)EBO -- 5.0 -- Vdc
(IE = --10 mAdc, IC = 0)
Collector-Base Cutoff Current ICBO -- --10 nAdc
(VCB = -- 200 Vdc, IE = 0)
Collector--Emitter Cutoff Current ICER
(VCE = -- 250 Vdc, RBE = 2.7 k) -- --50 nAdc
(VCE = -- 200 Vdc, RBE = 2.7 k TJ = 150C) -- --10 mAdc
ON CHARACTERISTICS
DC Current Gain hFE 50 -- --
(IC = --25 mAdc, VCE = --20 Vdc)
Collector-Emitter Saturation Voltage VCE(sat) -- -- 0.8 Vdc
(IC = -- 30 mAdc, IB = -- 5.0 mAdc)
DYNAMIC CHARACTERISTICS
Current-Gain -- Bandwidth Product fT 60 -- MHz
(VCE = -- 10 Vdc, IC = --10 mAdc, f = 35 MHz)
Feedback Capacitance Cre -- 1.6 pF
(VCE = -- 30 Vdc, IC = 0, f = 1.0 MHz)
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2
BF721T1G
300
VCE = 10 Vdc
TJ = +125C
250
hFE , DC CURRENT GAIN
200
25C
150
--55C
100
50
0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
100 150
Cib @ 1MHz
f T, CURRENT--GAIN -- BANDWIDTH (MHz)
130
110
C, CAPACITANCE (pF)
10
Ccb @ 1MHz 90
70
1.0
50 TJ = 25C
VCE = 20 Vdc
30 F = 20 MHz
0.1 10
0.1 1.0 10 100 1000 1 3 5 7 9 11 13 15 17 19 21
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 2. Capacitance Figure 3. Current-
-Gain -- Bandwidth
1.4
1.2 VCE(sat) @ 25C, IC/IB = 10
VCE(sat) @ 125C, IC/IB = 10
1.0
V, VOLTAGE (VOLTS)
VCE(sat) @ --55C, IC/IB = 10
VBE(sat) @ 25C, IC/IB = 10
0.8
VBE(sat) @ 125C, IC/IB = 10
0.6 VBE(sat) @ --55C, IC/IB = 10
VBE(on) @ 25C, VCE = 10 V
0.4 VBE(on) @ 125C, VCE = 10 V
VBE(on) @ --55C, VCE = 10 V
0.2
0.0
0.1 1.0 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. "ON" Voltages
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3
BF721T1G
PACKAGE DIMENSIONS
SOT-
-223 (TO--261)
CASE 318E--04
ISSUE N
D
b1 NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
4 MILLIMETERS INCHES
DIM MIN NOM MAX MIN NOM MAX
HE E A 1.50 1.63 1.75 0.060 0.064 0.068
1 2 3 A1 0.02 0.06 0.10 0.001 0.002 0.004
b 0.60 0.75 0.89 0.024 0.030 0.035
b1 2.90 3.06 3.20 0.115 0.121 0.126
c 0.24 0.29 0.35 0.009 0.012 0.014
b D 6.30 6.50 6.70 0.249 0.256 0.263
E 3.30 3.50 3.70 0.130 0.138 0.145
e1 e 2.20 2.30 2.40 0.087 0.091 0.094
e e1 0.85 0.94 1.05 0.033 0.037 0.041
L 0.20 ------ ------ 0.008 ------ ------
C L1 1.50 1.75 2.00 0.060 0.069 0.078
HE 6.70 7.00 7.30 0.264 0.276 0.287
A 0 -- 10 0 -- 10
0.08 (0003) STYLE 1:
A1 L PIN 1. BASE
L1
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
6.3
2.3 2.3
0.248
0.091 0.091
2.0
0.079
1.5 SCALE 6:1 inches
mm
0.059
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights
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