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Philips Semiconductors Product specification

Silicon Diffused Power Transistor BUT11AI

GENERAL DESCRIPTION
Enhanced performance, high speed switching npn transistor in TO220AB envelope specially suited for high
frequency electronic lighting ballast applications and converters, inverters, switching regulators, motor control
systems etc.

QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
VCESM Collector-emitter voltage peak value VBE = 0 V - 1000 V
VCEO Collector-emitter voltage (open base) - 450 V
IC Collector current (DC) - 5 A
ICM Collector current peak value - 10 A
Ptot Total power dissipation Tmb 25