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SEMICONDUCTOR KTC8050S
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
HIGH CURRENT APPLICATION.
FEATURE E
Complementary to KTC8550S. L B L
DIM MILLIMETERS
A _
2.93 + 0.20
B 1.30+0.20/-0.15
C 1.30 MAX
D
2 3 D 0.45+0.15/-0.05
A
G
E 2.40+0.30/-0.20
MAXIMUM RATING (Ta=25 )
H
1 G 1.90
H 0.95
CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Collector-Base Voltage VCBO 35 V P P
L 0.55
M 0.20 MIN
Collector-Emitter Voltage VCEO 30 V N 1.00+0.20/-0.10
P 7
N
C
J
Emitter-Base Voltage VEBO 5 V
M
K
Collector Current IC 800 mA
Emitter Current IE -800 mA 1. EMITTER
2. BASE
Collector Power Dissipation PC * 350 mW 3. COLLECTOR
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
SOT-23
* PC : Package Mounted On 99.5% Alumina (10 8 0.6 )
Marking
h FE Rank Lot No.
Type Name
BK
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=15V, IE=0 - - 50 nA
Collector-Base Breakdown Voltage V(BR)CBO IC=0.5mA, IE=0 35 - - V
Collector-Emitter Breakdown Voltage V(BR)CEO IC=1mA, IB=0 30 - - V
hFE(1) (Note) VCE=1V, IC=50mA 100 - 300
DC Current Gain
hFE(2) VCE=1V, IC=350mA 60 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=500mA, IB=20mA - - 0.5 V
Base-Emitter Voltage VBE VCE=1V, IC=500mA - - 1.2 V
Transition Frequency fT VCE=5V, IC=10mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, f=1MHz, IE=0 - 13 - pF
Note : hFE(1) Classification C : 100 200, D : 150 300
2003. 3. 25 Revision No : 1 1/2
KTC8050S
I C - V CE h FE - I C
1k 1k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
Ta=25 C 8 500 VCE =1V
800
DC CURRENT GAIN h FE
7 300
6 Ta=100 C
600 5
4 Ta=25 C
100
3
400 Ta=-25 C
2 50
30
200 I B =1mA
0
0 10
0 1 2 3 4 5 6 1 3 10 30 100 300 1k
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA)
VCE(sat) - I C I C - VBE
COLLECTOR-EMITTER SATURATION
1 1k
COMMON EMITTER COMMON EMITTER
COLLECTOR CURRENT I C (mA)
I C /I B =25 500 VCE =1V
0.5
VOLTAGE VCE(sat) (V)
300
0.3
C 100
00
=1 50
Ta
C
5 C
0.1
C
25 C 30 100
Ta=25
Ta=-25 C
Ta=-2
-25 C
Ta=
0.05 10
0.03 Ta=25 C 5
Ta=100 C 3
0.01 1
1 3 10 30 100 300 1k 0 0.2 0.4 0.6 0.8 1.0 1.2
COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE V BE (V)
Pc - Ta
500
COLLECTOR POWER DISSIPATION
1 MOUNTED ON 99.5%
ALUMINA 10x8x0.6mm
400 2 Ta=25 C
1
Pc (mW)
300
200
2
100
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE Ta ( C)
2003. 3. 25 Revision No : 1 2/2