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STW11NK100Z
STW11NK100Z
N-channel 1000V - 1.1 - 8.3A - TO-247
Zener - Protected SuperMESHTM PowerMOSFET
General features
VDSS
Type RDS(on) ID Pw
(@Tjmax)
STW11NK100Z 1000 V < 1.38 8.3 A 230W
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized TO-247
Very low intrinsic capacitances
Very good manufacturing repeatibility
Description
The SuperMESHTM series is obtained through an
extreme optimization of ST's well established Internal schematic diagram
strip-based PowerMESHTM layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmeshTM products.
Applications
Switching application
Order codes
Part number Marking Package Packaging
STW11NK100Z W11NK100Z TO-247 Tube
July 2006 Rev 2 1/14
www.st.com 14
Contents STW11NK100Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 Test circuit Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . 10
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
2/14
STW11NK100Z Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0) 1000 V
VDGR Drain-gate voltage (RGS = 20K) 1000 V
VGS Gate-source voltage