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MBT2222ADW
Dual General Purpose Transistors 3 2 1
6 5
4
NPN+NPN Silicon
1
2
3
4 5 6 SOT-363(SC-88)
NPN+NPN
Value
VCEO
(1)
150
833
TJ ,Tstg -55 to+150
MBT2222ADW=XX
u
1. Device mounted on FR4 glass epoxy printed circuit board using
the minimum recommended footprint
WEITRON
http://www.weitron.com.tw
MBT2222ADW
ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)
Characteristics Symbol Min Max Unit
ON CHARACTERISTICS
DC Current Gain -
(IC=0.1 mAdc, VCE=10 Vdc) 35
50 -
(IC=1.0 mAdc, VCE=10 Vdc)
hFE 75 - -
(IC=10 mAdc, VCE=10 Vdc, TA =-55 C)
100 300
(IC=150mAdc, VCE=10 Vdc) (2)
(I C =150mAdc, VCE=1.0Vdc) (2) 50 -
(IC=500 mAdc, VCE=10 Vdc) (2) 40 -
(2)
Collector-Emitter Saturation Voltage Vdc
(IC=150 mAdc, IB=15mAdc) VCE(sat) - 0.3
(IC=500 mAdc, IB=50mAdc) - 1.0
Base-Emitter Saturation Voltage (2) Vdc
(IC=150 mAdc, IB=15mAdc) VBE(sat) 0.6 1.2
(IC=500 mAdc, IB=50mAdc) - 2.0
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (3) fT 300 - MHz
(IC=20 mAdc, VCE=20 Vdc, f=100MHz)
Output Capacitance Cobo - 8.0 pF
(VCB=10 Vdc, IE=0, f=1.0MHz)
Input Capacitance Cibo - 25 pF
(VEB=0.5 Vdc, IC=0, f=1.0MHz)
Input Impedance
2.0 0.8
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz)
hie k
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) 0.25 1.25
Voltage Feeback Radio
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) hre - 8.0
x 10-4
(IC=10 mAdc, VCE=10 Vdc, f=1.0 kHz) 4.0
S mall-S ignal C urrent G ain
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) 50 300 -
hfe
(I C =10 mAdc, V C E =10V dc, f=1.0 kHz) 75 375
Output Admittance
(IC=1.0 mAdc, VCE=10 Vdc, f=1.0 kHz) hoe 5.0 35