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SEMICONDUCTOR KTX101E
TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR
GENERAL PURPOSE APPLICATION.
B
FEATURES B1
Including two devices in TES6.
(Thin Extreme Super mini type with 6 pin.)
1 6 DIM MILLIMETERS
C
Simplify circuit design. A _
1.6 + 0.05
A1
_
A
A1 1.0 + 0.05
Reduce a quantity of parts and manufacturing process. 2 5 _
C
B 1.6 + 0.05
B1 _
1.2 + 0.05
D
3 4 C 0.50
D _
0.2 + 0.05
H _
0.5 + 0.05
J _
0.12 + 0.05
EQUIVALENT CIRCUIT (TOP VIEW) P P
P 5
6 5 4 Marking
H
J
6 5 4
Lot No.
1. Q1 EMITTER
Q1 Q2 2. Q1 BASE
Type Name
B4 3.
4.
5.
6.
Q2
Q2
Q2
Q1
COLLECTOR
EMITTER
BASE
COLLECTOR
1 2 3
1 2 3
TES6
Q1 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 50 V
Emitter-Base Voltage VEBO 5 V
Collector Current IC 150
Base Current IB 30
Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO -50 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Collector Current IC -150
Base Current IB -30
Q1 , Q2 MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT
Collector Power Dissipation PC * 200
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
* Total Raing.
2008. 9. 23 Revision No : 2 1/5
KTX101E
Q1 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=60V, IE=0 - - 0.1
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1
DC Current Gain hFE (Note) VCE=6V, IC=2 120 - 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=100 , IB=10 - 0.1 0.25 V
Transition Frequency fT VCE=10V, IC=1 80 - -
Collector Output Capacitance Cob VCB=10V, IE=0, f=1 - 2.0 3.5
Noise Figure NF VCE=6V, IC=0.1 , f=1 , Rg=10 - 1.0 10
Note)hFE Classification : Y(4)120~240, GR(6)200~400
Q2 ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT.
Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -0.1
Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -0.1
DC Current Gain hFE (Note) VCE=-6V, IC=-2 120 - 400
Collector-Emitter Saturation Voltage VCE(SAT) IC=-100 , IB=-10 - -0.1 -0.3 V
Transition Frequency fT VCE=-10V, IC=-1 80 - -
Collector Output Capacitance Cob VCB=-10V, IE=0, f=1 - 4.0 7.0
Noise Figure NF VCE=-6V, IC=-0.1 , f=1 , Rg=10 - 1.0 10
Note)hFE Classification : Y(4)120~240, GR(6)200~400
2002. 1. 24 Revision No : 2 2/5
KTX101E
Q 1 (NPN TRANSISTOR)
I C - VCE h FE - I C
240 1k
COMMON EMITTER COMMON EMITTER
6.0mA 5.0mA
COLLECTOR CURRENT I C (mA)
Ta=25 C
200 500
3.0mA
DC CURRENT GAIN h FE
2.0mA
300
Ta=100 C VCE =6V
160
Ta=25 C
1.0mA Ta=-25 C
120 100
0.5mA 50
80
I B =0.2mA
30
VCE =1V
40
0
0 10
0 1 2 3 4 5 6 7 0.1 0.3 1 3 10 30 100 300
COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT I C (mA)
VCE(sat) - I C VBE(sat) - I C
1 10
COLLECTOR-EMITTER SATURATION
COMMON EMITTER COMMON EMITTER
BASE-EMITTER SATURATION
I C /I B=10 I C /I B=10
0.5 5
VOLTAGE VCE(sat) (V)
Ta=25 C
VOLTAGE VBE(sat) (V)
0.3 3
C
0.1 10
0 1
=
Ta
0.05 0.5
Ta=25 C
0.03 0.3
Ta=-25 C
0.01 0.1
0.1 0.3 1 3 10 30 100 300 0.1 0.3 1 3 10 30 100 300
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT IC (mA)
fT - IC I B - V BE
3k 3k
TRANSITION FREQUENCY f T (MHz)
COMMON EMITTER COMMON
VCE =10V EMITTER
1k
BASE CURRENT I B (