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SGSF344
HIGH VOLTAGE FASTSWITCHING NPN
POWER TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s VERY HIGH SWITCHING SPEED
s LOW BASE-DRIVE REQUIREMENTS
APPLICATIONS:
s SWITCH MODE POWER SUPPLIES
s HORIZONTAL DEFLECTION FOR COLOUR
TVS AND MONITORS
3
DESCRIPTION 2
1
The SGSF344 is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter TO-220
structure to enhance switching speeds.
The SGSF series is designed for high speed
switching applications such as power supplies
and horizontal deflection circuits in TVs and
monitors.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol Parameter Valu e Un it
V CES Collector-Emitter Voltage (VBE = 0) 1200 V
V CEO Collector-Emitter Voltage (IB = 0) 600 V
VEBO Emitter-Base Voltage (IC = 0) 7 V
IC Collector Current 7 A
I CM Collector Peak Current (tp < 5 ms) 12 A
IB Base Current 5 A
I BM Base Peak Current (tp < 5 ms) 8 A
o
P tot T otal Dissipation at Tc = 25 C 85 W
o
T s tg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction T emperature 150 C
June 1997 1/6
SGSF344
THERMAL DATA
o
R t hj-ca se Thermal Resistance Junction-case Max 1.5 C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol Parameter Test Cond ition s Min. Typ . Max. Un it
I CES Collector Cut-off V CE = 1200 V 200