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SEMICONDUCTOR KTC3423
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
AUDIO FREQUENCY AMPLIFIER APPLICATION. A
B D
C
E
FEATURES
F
High Breakdown Voltage : VCEO=150V(Min.).
Low Output Capacitance : Cob=5.0pF(Max.). G
High Transition Frequency : fT=120MHz(Typ.).
H
Complementary to KTA1360. DIM MILLIMETERS
J
A 8.3 MAX
K L B 5.8
C 0.7
D _
3.2 + 0.1
E 3.5
F _
11.0 + 0.3
MAXIMUM RATING (Ta=25 ) G 2.9 MAX
M
H 1.0 MAX
CHARACTERISTIC SYMBOL RATING UNIT J 1.9 MAX
O K _
0.75 + 0.15
N P
Collector-Base Voltage VCBO 150 V 1 2 3 L _
15.50 + 0.5
M _
2.3 + 0.1
Collector-Emitter Voltage VCEO 150 V N _
0.65 + 0.15
1. EMITTER O 1.6
Emitter-Base Voltage VEBO 5 V 2. COLLECTOR P 3.4 MAX
3. BASE
Collector Current IC 50 mA
Emitter Current IE -50 mA
TO-126
Base Current IB 5 mA
Collector Power Ta=25 1.5
PC W
Dissipation Tc=25 5
Junction Temperature Tj 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=150V, IE=0 - - 0.1 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 0.1 A
DC Current Gain hFE(Note) VCE=5V, IC=10mA 70 - 240
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=1mA - - 0.5 V
Base-Emitter Saturation Voltage VBE(sat) IC=10mA, IB=1mA - - 1.0 V
Transition Frequency fT VCE=30V, IC=10mA - 120 - MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1MHz - 3.5 5.0 pF
Note : hFE Classification O:70 140, Y:120 240
2007. 3. 28 Revision No : 2 1/3
KTC3423
2007. 3. 28 Revision No : 2 2/3
KTC3423
2007. 3. 28 Revision No : 2 3/3