Text preview for : bfr505.pdf part of Philips bfr505 . Electronic Components Datasheets Active components Transistors Philips bfr505.pdf



Back to : bfr505.pdf | Home

BFR505
NPN 9 GHz wideband transistor
Rev. 03 -- 20 July 2004 Product data sheet




1. Product profile

1.1 General description
The BFR505 is an NPN silicon planar epitaxial transistor, intended for applications in the
RF front end in wideband applications in the GHz range, such as analog and digital
cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers
and satellite TV tuners (SATV).

The transistor is encapsulated in a plastic SOT23 envelope.

1.2 Features
s High power gain
s Low noise figure
s High transition frequency
s Gold metallization ensures excellent reliability.

1.3 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCBO collector-base open emitter - - 20 V
voltage
VCES collector-emitter RBE = 0 - - 15 V
voltage
IC DC collector - - 18 mA
current
Ptot total power up to Ts = 135