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2N7007

N-Channel Enhancement-Mode
Vertical DMOS FET
Ordering Information
BVDSS / RDS(ON) ID(ON) Order Number / Package
BVDGS (max) (min) TO-92
240V 45 150mA 2N7007

Features Advanced DMOS Technology
s Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a
vertical DMOS structure and Supertex's well-proven silicon-gate
s Low power drive requirement
manufacturing process. This combination produces devices with
s Ease of paralleling the power handling capabilities of bipolar transistors and with the
high input impedance and positive temperature coefficient inher-
s Low CISS and fast switching speeds
ent in MOS devices. Characteristic of all MOS structures, these
s Excellent thermal stability devices are free from thermal runaway and thermally-induced
s Integral Source-Drain diode secondary breakdown.

s High input impedance and high gain Supertex's vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where high breakdown
s Complementary N- and P-channel devices voltage, high input impedance, low input capacitance, and fast
switching speeds are desired.

Applications
s Motor controls
s Converters
Package Options
s Amplifiers
s Switches
s Power supply circuits
s Drivers (relays, hammers, solenoids, lamps,
memories, displays, bipolar transistors, etc.)

Absolute Maximum Ratings
Drain-to-Source Voltage BVDSS
SGD
Drain-to-Gate Voltage BVDGS TO-92
Gate-to-Source Voltage