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SEMICONDUCTOR KRC410, 411, 414
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
E
FEATURES M B M
With Built-in Bias Resistors. DIM MILLIMETERS
A _
2.00 + 0.20
D
Simplify Circuit Design. 2 B _
1.25 + 0.15
A
J
C _
0.90 + 0.10
Reduce a Quantity of Parts and Manufacturing Process.
G
1 3
D 0.3+0.10/-0.05
_
2.10 + 0.20
High Packing Density. E
G 0.65
P H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
EQUIVALENT CIRCUIT L 0.70
C
L
H _
M 0.42 + 0.10
N 0.10 MIN
N N
C K P 0.1 MAX
R1
B 1. COMMON (EMITTER)
2. IN (BASE)
3. OUT (COLLECTOR)
E
USM
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC SYMBOL RATING UNIT CHARACTERISTIC SYMBOL RATING UNIT
Collector-Base Voltage VCBO 50 V Collector Power Dissipation PC 100 mW
Collector-Emitter Voltage VCEO 50 V Junction Temperature Tj 150
Emitter-Base Voltage VEBO 5 V Storage Temperature Range Tstg -55 150
Collector Current IC 100 mA
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA
DC Current Gain hFE VCE=5V, IC=1mA 120 - -
Collector-Emitter Saturation Voltage VCE(sat) IC=10mA, IB=0.5mA - 0.1 0.3 V
Transition Frequency fT * VCE=10V, IC=5mA - 250 - MHz
KRC410 3.29 4.7 6.11
Input Resistor KRC411 R1 7 10 13 k
KRC414 32.9 47 61.1
Marking
MARK SPEC Lot No.
TYPE KRC410 KRC411 KRC414
Type Name
MARK NK NM NP
2008. 10. 30 Revision No : 4 1/4
KRC410, 411, 414
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
KRC410 - 0.025 -
Rise Time KRC411 tr - 0.03 -
KRC414 - 0.11 -
KRC410 - 3.0 -
VO=5V
Switching
Storage Time KRC411 tstg VIN=5V - 2.0 - S
Time
RL=1k
KRC414 - 5.0 -
KRC410 - 0.2 -
Fall Time KRC411 tf - 0.12 -
KRC414 - 1.4 -
2008. 10. 30 Revision No : 1 2/4
KRC410, 411, 414
h FE - I C V CE(sat) - I C
KRC410 KRC410
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 Ta=100 C 0.5
300 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C V CE(sat) - I C
KRC411 KRC411
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
Ta=-25 C
100 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
VCE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC412 KRC412
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 10. 30 Revision No : 4 3/4
KRC410, 411, 414
h FE - I C VCE(sat) - I C
KRC413 KRC413
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
VOLTAGE VCE(sat) (V)
DC CURRENT GAIN h FE
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C 0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
V CE =5V Ta=-25 C
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
h FE - I C VCE(sat) - I C
KRC414 KRC414
COLLECTOR-EMITTER SATURATION
2k 2
I C /I B =20
1k 1
DC CURRENT GAIN h FE
VOLTAGE VCE(sat) (V)
500 0.5
300 Ta=100 C 0.3
Ta=25 C
100 Ta=-25 C
0.1
Ta=100 C
50 0.05
30 0.03 Ta=25 C
Ta=-25 C
V CE =5V
10 0.01
0.1 0.3 1 3 10 30 100 0.1 0.3 1 3 10 30 100
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
2008. 10. 30 Revision No : 4 4/4